Chin. Phys. Lett.  2004, Vol. 21 Issue (3): 521-523    DOI:
Original Articles |
Effect of SiO2 Encapsulation on the Nitrogen Reorganization in a GaNAs/GaAs Single Quantum Well
XU Ying-Qiang;ZHANG Wei;NIU Zhi-Chuang;WU Rong-Han;WANG Qi-Ming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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XU Ying-Qiang, ZHANG Wei, NIU Zhi-Chuang et al  2004 Chin. Phys. Lett. 21 521-523
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Abstract Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800°C for 30 s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25 meV and that for the bare region is 0.8 meV. The results can be attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by the SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9 eV and 3.1 eV, respectively.

Keywords: 66.30.Hs      71.23.An      78.55.Cr      81.40.Tv     
Published: 01 March 2004
PACS:  66.30.Hs  
  71.23.An (Theories and models; localized states)  
  78.55.Cr (III-V semiconductors)  
  81.40.Tv (Optical and dielectric properties related to treatment conditions)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I3/0521
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XU Ying-Qiang
ZHANG Wei
NIU Zhi-Chuang
WU Rong-Han
WANG Qi-Ming
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