Chin. Phys. Lett.  2004, Vol. 21 Issue (2): 400-402    DOI:
Original Articles |
Structural and Electrical Properties of Amorphous Hydrogen Carbon-Nitrogen Films
SUO Da-Cheng1;LIU Yi-Chun1,2;LIU Yan1;QI Xiu-Ying1;ZHONG Dian-Qiang1
1Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024 2Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sciences, Changchun 130021
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SUO Da-Cheng, LIU Yi-Chun, LIU Yan et al  2004 Chin. Phys. Lett. 21 400-402
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Abstract Amorphous hydrogenated carbon-nitrogen (a-C:H:(N)) films with different nitrogen contents have been deposited by using rf-sputtering of a high purity graphite target in an Ar-H2-N2 atmosphere. Transmittance and reflectance spectra are used to characterize the Tauc gap and absorption coefficients in the wavelength range 0.185-3.2μm. The temperature dependence of conductivity demonstrates a hopping mechanism of the Fermi level in the temperature range of 77-300 K. The density of state at the Fermi level is derived from the direct current conductivity. The photoluminescence properties of a-C:H:N films were investigated. The photoluminescence peak has a blue shift with increasing excitation energy. These results are discussed on the basis of a model in which the different sp2 clusters dispersed in sp3 matrices.

Keywords: 78.55.Hx      78.66.Jg      78.30.Ly      61.43.Dq     
Published: 01 February 2004
PACS:  78.55.Hx (Other solid inorganic materials)  
  78.66.Jg (Amorphous semiconductors; glasses)  
  78.30.Ly (Disordered solids)  
  61.43.Dq (Amorphous semiconductors, metals, and alloys)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I2/0400
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