| Original Articles |
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Design of Synthesized DBRs for Long-Wavelength InP-Based Vertical-Cavity Surface-Emitting Lasers |
| HUANG Zhan-Chao; WU Hui-Zhen |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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HUANG Zhan-Chao, WU Hui-Zhen 2004 Chin. Phys. Lett. 21 316-319 |
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Abstract We report applications of a metallic film and a phase matching layer (PML) to increase the reflectivity of the cavity mirror in a long-wavelength InP-based vertical-cavity surface-emitting laser (VCSEL). The synthesis of the InGaAsP/InP distributed-Bragg reflector (DBR) with an Au film and the InP PML leads to the decrease of periods of the DBR multilayer stacks from 33 to 20 while keeping the reflectivity of the structure over 99%. The reflectivity over the whole forbidden band is significantly increased and become flatter compared to the bare DBR. The use of smaller DBR periods in a long wavelength VCSEL makes the epitaxial growth well controllable, decrease of the heat resistance, and decrease of the in-series electrical resistance of the devices. This can improve the reliability of the VCSEL growth and possibly cut down the cost of VCSEL devices.
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| Keywords:
42.60.Da
42.55.Sa
78.66.Bz
42.25.Bs
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Published: 01 February 2004
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| PACS: |
42.60.Da
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(Resonators, cavities, amplifiers, arrays, and rings)
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42.55.Sa
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(Microcavity and microdisk lasers)
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78.66.Bz
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(Metals and metallic alloys)
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42.25.Bs
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(Wave propagation, transmission and absorption)
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