Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

Chin. Phys. Lett.

2004, Vol. 21

Issue (12): 2529-2532 DOI:

Original Articles

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

HUANG Jin-Song¹;LUO Xiang-Dong¹;YANG Xu-Dong¹;SUN Zheng¹;SUN Bao-Quan¹;XU Zhong-Ying¹;GE Wei-Kun²

¹Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ²Department of Physics, Hong Kong University of Sciences and Technology, Hong Kong

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HUANG Jin-Song, LUO Xiang-Dong, YANG Xu-Dong et al 2004 Chin. Phys. Lett. 21 2529-2532

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Abstract We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a function of the monitored emission energy at different temperatures, we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 120K. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results

Keywords: 78.55.-m 78.55.Cr 68.67.Hc

Published: 01 December 2004

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.55.Cr	(III-V semiconductors)
	68.67.Hc

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I12/02529

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	HUANG Jin-Song
	LUO Xiang-Dong
	YANG Xu-Dong
	SUN Zheng
	SUN Bao-Quan
	XU Zhong-Ying
	GE Wei-Kun

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