| Original Articles |
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Enhancement of Critical Current Density in Graphite Doped MgB2 Wires |
| XU Hong-Liang1,2,3;FENG Yong2;XU Zheng1;YAN Guo2;CAO Lie-Zhao4;LI Xiao-Guang5 |
| 1School of Material Science and Engineering, Tongji University, Shanghai 200092
2Superconducting Material Research Centre, Northwest Institute for Nonferrous Metal Research, PO Box 51, Xi’an 710016
3School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450002
4Department of Physics, University of Science and Technology of China, Hefei 230026
5Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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XU Hong-Liang, FENG Yong, XU Zheng et al 2004 Chin. Phys. Lett. 21 2511-2513 |
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Abstract Graphite doped MgB2-xCx (x = 0.00, 0.05, 0.10) wires were fabricated via the in situ powder-in-tube method in flowing argon by using low carbon steel tubes as the sheath materials. With the increase of graphite concentration, the amount of unreacted graphite in the core area increases, and the average grain size of MgB2 decreases. It is found that the critical current density Jc can be significantly improved by graphite doping. The MgB2 wire with x = 0.05 exhibits the best Jc value of 16710A/cm2 at 6K, 4.5T, but the MgB1.9C0.1 wire has the highest Jc value of 2060 A/cm2 at 6K, 8T. It is suggested that the enhancement of Jc is due to not only the improvement of the microstructure features but also the introduction of pinning centres.
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| Keywords:
74.70.Ad
74.62.Dh
74.62.Bf
74.25.Sv
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Published: 01 December 2004
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| PACS: |
74.70.Ad
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(Metals; alloys and binary compounds)
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74.62.Dh
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(Effects of crystal defects, doping and substitution)
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74.62.Bf
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(Effects of material synthesis, crystal structure, and chemical composition)
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74.25.Sv
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(Critical currents)
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