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SiC-Based p+ nn+ Diode for Picosecond Semiconductor Closing Switch |
| ZHANG Fei;LI Cheng-Fang |
| Department of Physics, Wuhan University, Wuhan 430072 |
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| Cite this article: |
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ZHANG Fei, LI Cheng-Fang 2004 Chin. Phys. Lett. 21 2305-2307 |
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Abstract We study a SiC-based diode with a p+ nn+ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode. By two-dimensional mixed device-circuit simulations, we demonstrate a single device reliably operated at 4 kV and at risetime 11 ps with high output dV/dt=276 kV/ns, which is in good agreement with the experimental results.
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| Keywords:
85.30.De
85.30.Kk
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Published: 01 November 2004
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Kk
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(Junction diodes)
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