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Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation |
| LIANG Yan1,2;DONG Gui-Fang1;HU Yuan-Chuan1,2;HU Yan1,2;WANG Li-Duo1,2;QIU Yong2 |
| 1Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Tsinghua University, Beijing 100084
2Department of Chemistry, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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LIANG Yan, DONG Gui-Fang, HU Yuan-Chuan et al 2004 Chin. Phys. Lett. 21 2278-2280 |
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Abstract Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate) as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.
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| Keywords:
73.61.Ph
73.61.Ng
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Published: 01 November 2004
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