Strong Electron Field Emission from Nano-CdS Modified Porous Silicon

Chin. Phys. Lett.

2004, Vol. 21

Issue (10): 2049-2050 DOI:

Original Articles

Strong Electron Field Emission from Nano-CdS Modified Porous Silicon

XU Ling¹;HAN Guan-Qi¹;WENG Jian¹;TAM Hoi-Lam²;Li King-Fai²;ZHANG Yu¹;XU Jun¹;HUANG Xin-Fan¹;CHEAH Kok-Wai¹

¹State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 ²Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong

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XU Ling, HAN Guan-Qi, WENG Jian et al 2004 Chin. Phys. Lett. 21 2049-2050

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Abstract A nano - CdS modified porous silicon (nano - CdS/PS) field emitter is fabricated by chemical method at room temperature. The electron field emission characteristics show that the turn-on field for nano - CdS/PS is about 4.0V/m and the emission current reaches about 20μA/cm² at 5.0V/μm. This emission current is 20 times larger than that of the PS substrate without nano - CdS modification. The strong field emission properties make the nano - CdS/PS field emitter a good candidate for applications in the field of electronic and optoelectronic devices.

Keywords: 81.07.Ta 79.70.+q

Published: 01 October 2004

PACS:	81.07.Ta	(Quantum dots)
	79.70.+q	(Field emission, ionization, evaporation, and desorption)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I10/02049

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	XU Ling
	HAN Guan-Qi
	WENG Jian
	TAM Hoi-Lam
	Li King-Fai
	ZHANG Yu
	XU Jun
	HUANG Xin-Fan
	CHEAH Kok-Wai

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