| Original Articles |
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Improvement of Properties of p-GaN by Mg Delta Doping |
| PAN Yao-Bo;YANG Zhi-Jian;LU Yu;LU Min;HU Cheng-Yu;YU Tong-Jun;HU Xiao-Dong;ZHANG Guo-Yi |
| School of Physics and State Key Laboratory for Mesoscopic Physics, Research Centre for Wide Gap Semiconductor, Peking University, Beijing 100871 |
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| Cite this article: |
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PAN Yao-Bo, YANG Zhi-Jian, LU Yu et al 2004 Chin. Phys. Lett. 21 2016-2018 |
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Abstract The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.
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| Keywords:
61.72.Vv
73.61.Ey
81.15.Gh
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Published: 01 October 2004
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| PACS: |
61.72.Vv
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73.61.Ey
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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