Chin. Phys. Lett.  2004, Vol. 21 Issue (1): 81-83    DOI:
Original Articles |
Improvement of 1.3-μm GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE
YUE Ai-Wen1,2;SHEN Kun2;SHI Jing1,3;WANG Ren-Fan2
1Department of Physics, Wuhan University, Wuhan 430072 2Wuhan Telecommunication Devices Co., Wuhan 430074 3International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110016
Cite this article:   
YUE Ai-Wen, SHEN Kun, SHI Jing et al  2004 Chin. Phys. Lett. 21 81-83
Download: PDF(406KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract We report the improved performance of the conventional contact 1.3 μm GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 μm GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85°C, which were the best results for 1.3 μm GaInNAs VCSELs reported. Maximum single mode output power of 0.256 mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature.

Keywords: 42.55.Px     
Published: 01 January 2004
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I1/081
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
YUE Ai-Wen
SHEN Kun
SHI Jing
WANG Ren-Fan
Related articles from Frontiers Journals
[1] LIU Dong, FU Yong-Qi, YANG Le-Chen, ZHANG Bao-Shun, LI Hai-Jun, FU Kai, XIONG Min. Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors[J]. Chin. Phys. Lett., 2012, 29(6): 81-83
[2] MAO Yi-Wei, WANG Yao, CHEN Yang-Hua, XUE Zheng-Qun, LIN Qi, DUAN Yan-Min, SU Hui. Characteristic Optimization of 1.3 μm High-Speed MQW InGaAsP-AlGaInAs Lasers[J]. Chin. Phys. Lett., 2012, 29(6): 81-83
[3] SU Zhou-Ping**,JI Zhi-Cheng,ZHU Zhuo-Wei,QUE Li-Zhi,ZHU Yun. Phase Locking of Laser Diode Array by Using an Off-Axis External Talbot Cavity[J]. Chin. Phys. Lett., 2012, 29(5): 81-83
[4] HUANG Xi,QIN Cui,YU Yu,ZHANG Zheng,ZHANG Xin-Liang**. Single- and Dual-Channel DPSK Signal Amplitude Regeneration Based on a Single Semiconductor Optical Amplifier[J]. Chin. Phys. Lett., 2012, 29(5): 81-83
[5] WU Wen-Han,HUANG Xi,YU Yu**,ZHANG Xin-Liang. RZ-DQPSK Signal Amplitude Regeneration Using a Semiconductor Optical Amplifier[J]. Chin. Phys. Lett., 2012, 29(4): 81-83
[6] LI Nian-Qiang, PAN Wei, YAN Lian-Shan, LUO Bin, XU Ming-Feng, TANG Yi-Long. Quantifying Information Flow between Two Chaotic Semiconductor Lasers Using Symbolic Transfer Entropy[J]. Chin. Phys. Lett., 2012, 29(3): 81-83
[7] KONG Duan-Hua, ZHU Hong-Liang, LIANG Song, QIU Ji-Fang, ZHAO Ling-Juan. Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser[J]. Chin. Phys. Lett., 2012, 29(2): 81-83
[8] KONG Duan-Hua, ZHU Hong-Liang, LIANG Song, WANG Bao-Jun, BIAN Jing, MA Li, YU Wen-Ke, LOU Cai-Yun . Influence Factors of an All-Optical Recovered Clock from Two-Section DFB Lasers[J]. Chin. Phys. Lett., 2011, 28(9): 81-83
[9] ZHOU Kang**, XU Chen, XIE Yi-Yang, ZHAO Zhen-Bo, LIU Fa, SHEN Guang-Di . Reduction of the Far-Field Divergence Angle of an 850nm Multi-Leaf Holey Vertical Cavity Surface Emitting Laser[J]. Chin. Phys. Lett., 2011, 28(8): 81-83
[10] WANG Xiao-Long, TAO Tian-Jiong, CHENG Bing, WU Bin, XU Yun-Fei, WANG Zhao-Ying, LIN Qiang** . A Digital Phase Lock Loop for an External Cavity Diode Laser[J]. Chin. Phys. Lett., 2011, 28(8): 81-83
[11] LIU Jie**, YANG Ji-Min, WANG Wei-Wei, ZHENG Li-He, SU Liang-Bi, XU Jun . Kerr-Lens Self-Mode-Locked Laser Characteristics of Yb:Lu2SiO5 Crystal[J]. Chin. Phys. Lett., 2011, 28(7): 81-83
[12] ZHOU Ya-Ting, **, SHI Yue-Chun, LI Si-Min, LIU Sheng-Chun, CHEN Xiang-Fei** . A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays[J]. Chin. Phys. Lett., 2011, 28(7): 81-83
[13] ZHANG Jin-Chuan, , WANG Li-Jun**, LIU Wan-Feng, LIU Feng-Qi, YIN Wen, LIU Jun-Qi, LI Lu, WANG Zhan-Guo . Room-Temperature Continuous-Wave Operation of a Tunable External Cavity Quantum Cascade Laser[J]. Chin. Phys. Lett., 2011, 28(7): 81-83
[14] PENG Yu, **, ZHAO Yang, LI Ye, YANG Tao, CAO Jian-Ping, FANG Zhan-Jun, ZANG Er-Jun . Diode Laser Optically Injected by Resonance of a Monolithic Cavity[J]. Chin. Phys. Lett., 2011, 28(11): 81-83
[15] HUANG Xi, QIN Cui, YU Yu, ZHANG Xin-Liang** . Single and Multicasting Inverted-Wavelength Conversion at 80 Gb/s Based on a Single Semiconductor Optical Amplifier[J]. Chin. Phys. Lett., 2011, 28(11): 81-83
Viewed
Full text


Abstract