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Multiple-Scattering of Near-Edge X-ray Absorption Fine Structure of Sulfur-Passivated InP(100) Surface |
| CAO Song1;TANG Jing-Chang1,2;SHEN Shao-Lai1;CHEN Geng-Sheng1;MA Dan1 |
| 1Department of Physics, Zhejiang University, Hangzhou 310027
2State Key Laboratory for Silicon Material Science, Zhejiang University, Hangzhou 310027
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| Cite this article: |
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CAO Song, TANG Jing-Chang, SHEN Shao-Lai et al 2003 Chin. Phys. Lett. 20 1151-1154 |
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Abstract We use the multiple-scattering cluster method to calculate the sulfur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface. The physical origins of the resonances in the NEXAFS have been unveiled. It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulfur and the nearest indium atoms. The studies show that two S-S dimers with the bond lengthes of 2.05Å and 3.05Å coexist in the surface, meanwhile the bridge and antibridge site adsorption of single S could not be ruled out. We support the scanning tunneling microscopy result that the S-passivated InP(100) surface exhibits significant disorder.
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| Keywords:
78.70.Dm
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Published: 01 July 2003
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| PACS: |
78.70.Dm
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(X-ray absorption spectra)
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