| Original Articles |
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Influence of Thickness on Field Emission Characteristics of Nanometer Boron Nitride Thin Films |
| GU Guang-Rui1,2;LI Ying-Ai1;TAO Yan-Chun3;HE Zhi1;LI Jun-Jie1;YIN Hong1;LI Wei-Qing1;ZHAO Yong-Nian1,3 |
| 1National Key Laboratory of Superhard Materials, Jilin University, Changchun 130023
2College of Science and Engineering, Yanbian University, Yanji 133002
3Key Laboratory for Supermolecular Structure and Spectroscopy, Jilin University, Changchun 130023 |
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| Cite this article: |
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GU Guang-Rui, LI Ying-Ai, TAO Yan-Chun et al 2003 Chin. Phys. Lett. 20 947-949 |
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Abstract Nanometer boron nitride (BN) thin films with various thickness (54-135 nm) were prepared on Si(100) by rf magnetic sputtering physical vapor deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11 V/μm and the highest emission current density of 24μA/cm2 at a electric field of 23 V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with the increase of the thickness in the nanometer range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunneling through the potential barrier at the surface of BN thin films.
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| Keywords:
79.70.+q
81.15.Cd
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Published: 01 June 2003
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| PACS: |
79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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81.15.Cd
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(Deposition by sputtering)
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