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Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection |
| DONG Liang;YUE Rui-Feng;LIU Li-Tian |
| Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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DONG Liang, YUE Rui-Feng, LIU Li-Tian 2003 Chin. Phys. Lett. 20 770-773 |
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Abstract An uncooled poly SiGe microbolometer for infrared detection has been fabricated and characterized. The poly SiGe thin film is deposited by ultrahigh vacuum chemical vapor deposition (UHVCVD) system and its structural properties are characterized by Rutherford backscattering spectrometry (RBS) and Raman. The dependences of the temperature coefficient of resistance on operation temperature and on annealing temperature have been investigated. A leg-supported microbridge is used to decrease the thermal conductance of microbolometer with the silicon micromachining technique. The results show that at a chopping frequency of 15 Hz and a bias voltage of 5 V, the maximum detectivity of 8.3 x 108cmHz1/2/W is achieved with a thermal response time of 16.6 ms.
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| Keywords:
85.60.Gz
07.10.Cm
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Published: 01 May 2003
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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07.10.Cm
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(Micromechanical devices and systems)
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