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Diameter Modification of Si Nanowires via Catalyst Size |
| XING Ying-Jie1,2;XI Zhong-He1;XUE Zeng-Quan1;YU Da-Peng2 |
| 1Department of Electronics, Peking University, Beijing 100871
2School of Physics, Mesoscopic Physics National Laboratory, and Electron Microscopy Laboratory, Peking University, Beijing 100871
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| Cite this article: |
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XING Ying-Jie, XI Zhong-He, XUE Zeng-Quan et al 2003 Chin. Phys. Lett. 20 700-702 |
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Abstract Si nanowires with different diameters are grown on catalyst coated Si substrates via a solid-liquid-solid mechanism. It is found that the thickness and type of catalyst film can modify the average diameter of Si nanowires obviously. The nanowires prepared on substrates deposited with Ni film of 40, 10, and 4 nm thick have a mean diameter around 41, 36, and 24 nm, respectively. Si nanowires with the smallest average diameter (～ 16 nm) are grown with a gold catalyst. Studies of diameter distributions show that the minimum diameter of nanowires does not shift with the average diameters spontaneously and has the same size of 10 nm.
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| Keywords:
61.46.+w
81.16.-c
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Published: 01 May 2003
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