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Direct Current Hopping Conductivity in One-Dimensional Nanometer Systems |
| SONG Yi-Pu1,2; XU Hui1;LUO Feng1 |
| 1Physics School of Science and Technology, Central South University, Changsha 410083
2Department of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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SONG Yi-Pu, XU Hui, LUO Feng 2003 Chin. Phys. Lett. 20 277-280 |
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Abstract A one-dimensional random nanocrystalline chain model is established. A dc electron-phonon-field conductance model of electron tunneling transfer is set up, and a new dc conductance formula in one-dimensional nanometer systems is derived. By calculating the dc conductivity, the relationship among the electric field, temperature and conductivity is analysed, and the effect of the crystalline grain size and the distortion of interfacial atoms on the dc conductance is discussed. The result shows that the nanometer system appears the characteristic of negative differential dependence of resistance and temperature at low temperature. The dc conductivity of nanometer systems varies with the change of electric field and trends to rise as the crystalline grain size increases and to decrease as the distorted degree of interfacial atoms increases.
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| Keywords:
71.23.-k
72.10.-d
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Published: 01 February 2003
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| PACS: |
71.23.-k
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(Electronic structure of disordered solids)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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