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Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser |
| ZHANG Duan-Ming1,2;GUAN Li1,2;YU Bo-Ming1;LI Zhi-Hua1,2 |
| 1Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
2State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074 |
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| Cite this article: |
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ZHANG Duan-Ming, GUAN Li, YU Bo-Ming et al 2003 Chin. Phys. Lett. 20 263-266 |
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Abstract We use the Monte-Carlo simulation method to perform the early growth stage of thin film prepared by pulsed laser deposition. We focus on the number of point defects on the substrate surface varying with the energy density of laser and substrate temperature. The results show that the laser energy and the substrate temperature strongly affect the morphology and size of the growth islands and the deposition rate of thin film. Our results are in good agreement with the related experimental results.
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| Keywords:
61.72.Ji
81.10.Aj
02.70.Uu
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Published: 01 February 2003
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| PACS: |
61.72.Ji
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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02.70.Uu
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(Applications of Monte Carlo methods)
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