| Original Articles |
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Temperature-Dependent Photoluminescence of ZnTe Films Grown on
Si Substrates |
| SHAN Chong-Xin;FAN Xi-Wu;ZHANG Ji-Ying;ZHANG Zhen-Zhong;LU You-Ming;LIU Yi-Chun;SHEN De-Zhen |
| Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 |
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| Cite this article: |
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SHAN Chong-Xin, FAN Xi-Wu, ZHANG Ji-Ying et al 2003 Chin. Phys. Lett. 20 2049-2052 |
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Abstract ZnTe films have been prepared on Si substrates by metal-organic
chemical vapor deposition (MOCVD), and the temperature-dependent
photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83 K shows an asymmetry line shape, which can be decomposed into two Gaussian lines labeled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157 K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.
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| Keywords:
78.55.Et
78.66.Hf
81.15.Gh
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Published: 01 November 2003
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| PACS: |
78.55.Et
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(II-VI semiconductors)
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78.66.Hf
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(II-VI semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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