Electronic State of Bismuth in BaBiO<suB>3</suB> up to 9 GPa Investigated by Optical Spectroscopy

Chin. Phys. Lett.

2003, Vol. 20

Issue (11): 2027-2029 DOI:

Original Articles

Electronic State of Bismuth in BaBiO₃ up to 9 GPa Investigated by Optical Spectroscopy

LIU Xiao-Jun^1,2;MORITOMO Yutaka²

¹Laboratory of Modern Acoustics and Institute of Acoustics, Nanjing University, Nanjing 210093 ²Department of Applied Physics, Nagoya University, Nagoya 464-8601, Japan

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LIU Xiao-Jun, MORITOMO Yutaka 2003 Chin. Phys. Lett. 20 2027-2029

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Abstract Effects of hydrostatic pressure on the mixed-valence (MV) bismuth complex BaBiO₃ have been investigated up to ～9 GPa by means of high-pressure Raman scattering and absorption spectra at 300 K. The pressure-induced hardening behaviour of the Bi-O stretching mode suggests that the predicted pressure-induced MV to the single-valence (SV) phase change cannot occur. Investigation of absorption spectra with pressure shows the enhanced optical gap E_gap, which further indicates the remained MV state of Bi ions.

Keywords: 74.62.Fj 71.30.Th 78.30.-j 78.40.-q

Published: 01 November 2003

PACS:	74.62.Fj	(Effects of pressure)
	71.30.Th
	78.30.-j	(Infrared and Raman spectra)
	78.40.-q	(Absorption and reflection spectra: visible and ultraviolet)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I11/02027

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