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A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapor Deposition |
| WANG Yong-Gang1;MA Xiao-Yu1;LI Chun-Yong2;ZHANG Zhi-Guo2;ZHANG Bing-Yuan3,4;ZHANG Zhi-Gang3 |
| 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Physics, Chinese Academy of Sciences, Beijing 100080
3School of Laser Engineering, Beijing University of Technology, Beijing 100022
4College of Physics Science and Information Engineering, Liaocheng University, Liaocheng 252059 |
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| Cite this article: |
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WANG Yong-Gang, MA Xiao-Yu, LI Chun-Yong et al 2003 Chin. Phys. Lett. 20 1960-1962 |
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Abstract We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror (SESAM) from which we achieved a 10 ps pulse duration at 150 MHz repetition rate. The SESAM was grown by metal organic chemical vapor deposition at low temperature. The recovery time was measured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.
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| Keywords:
42.65.Tg
42.79.Wc
42.65.Re
42.60.Gd
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Published: 01 November 2003
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| PACS: |
42.65.Tg
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(Optical solitons; nonlinear guided waves)
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42.79.Wc
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(Optical coatings)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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42.60.Gd
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(Q-switching)
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