| Original Articles |
|
|
|
|
Growth of Co Nanoclusters on Si3N4 Surface Formed on Si(111) |
| LIU Xi;JIA Jin-Feng;WANG Jun-Zhong;XUE Qi-Kun |
| State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
|
| Cite this article: |
|
LIU Xi, JIA Jin-Feng, WANG Jun-Zhong et al 2003 Chin. Phys. Lett. 20 1871-1874 |
|
|
|
Abstract We have grown high density Co clusters with a narrow-sized distribution on the Si3N4(0001)-(8 x 8) surface. In the submonolayer regime, Co clusters tend to keep a certain size (～ 1.45 nm in diameter) irrespective of coverage. With increasing coverage above 0.92 ML, two new clusters with certain but larger sizes are formed. This novel growth behaviour can be explained by the quantum size effect [Phys. Rev. Lett. 90 (2003) 185506]. It is found that the Co cluster size distribution can be improved by post annealing. Even at high temperature (700°C), no reaction of Co with Si3N4 is observed, indicating that Si3N4(0001)-(8 x 8) is a promising substrate for growth of magnetic nanostructures.
|
| Keywords:
81.07.-b
68.37.Ef
68.43.Bc
61.46.+w
|
|
|
Published: 01 October 2003
|
|
| PACS: |
81.07.-b
|
(Nanoscale materials and structures: fabrication and characterization)
|
| |
68.37.Ef
|
(Scanning tunneling microscopy (including chemistry induced with STM))
|
| |
68.43.Bc
|
(Ab initio calculations of adsorbate structure and reactions)
|
| |
61.46.+w
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
