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Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapor Deposition |
| HU Gui-Qing1;KONG Xiang1;WAN Li1;WANG Yi-Qian1;DUAN Xiao-Feng1;LU Yuan2;LIU Xiang-Lin2 |
| 1Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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HU Gui-Qing, KONG Xiang, WAN Li et al 2003 Chin. Phys. Lett. 20 1811-1814 |
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Abstract We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapor deposition method. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.
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| Keywords:
68.37.Lp
78.55.Cr
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Published: 01 October 2003
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| PACS: |
68.37.Lp
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(Transmission electron microscopy (TEM))
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78.55.Cr
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(III-V semiconductors)
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