Chin. Phys. Lett.  2003, Vol. 20 Issue (10): 1789-1791    DOI:
Original Articles |
Picosecond Pulse Laser Microstructuring of Silicon
ZHAO Ming;YIN Gang;ZHU Jing-Tao;ZHAO Li
Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433
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ZHAO Ming, YIN Gang, ZHU Jing-Tao et al  2003 Chin. Phys. Lett. 20 1789-1791
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Abstract We report the experimental results of picosecond pulse laser microstructuring (pulse duration 35 ps, wavelength 1.06 μm, repetition rate 10 Hz) of silicon using the direct focusing technique. Arrays of sharp conical spikes located below the initial surface have been formed by cumulative picosecond pulsed laser irradiation of silicon in SF6. Irradiation of silicon surface in air, N2, or vacuum creates ripple-like patterns, but does not create the sharp conical spikes.
Keywords: 52.38.Mf      79.20.Ds      81.65.Cf     
Published: 01 October 2003
PACS:  52.38.Mf (Laser ablation)  
  79.20.Ds (Laser-beam impact phenomena)  
  81.65.Cf (Surface cleaning, etching, patterning)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I10/01789
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