| Original Articles |
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A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect |
| LIN Qing;ZHANG Zheng-Xuan;ZHU Ming;XIE Xin-Yun;SONG Hua-Qing;LIN Cheng-Lu |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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LIN Qing, ZHANG Zheng-Xuan, ZHU Ming et al 2003 Chin. Phys. Lett. 20 158-160 |
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Abstract A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-semiconductor field effect transistor (MOSFET). The device has been verified in two-dimensional device simulation. The new structure reduces the self-heating effect of SOI MOSFET and decreases the negative differential transconductance.
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| Keywords:
85.30.De
73.40.Ty
02.60.Cb
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Published: 01 January 2003
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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02.60.Cb
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(Numerical simulation; solution of equations)
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