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Preparation and Transparent Property of the n-ZnO/p-Diamond Heterostructure |
| WANG Cheng-Xin;GAO Chun-Xiao;LIU Hong-Wu;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia |
| State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 |
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| Cite this article: |
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WANG Cheng-Xin, GAO Chun-Xiao, LIU Hong-Wu et al 2003 Chin. Phys. Lett. 20 127-129 |
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Abstract Heterostructures of an n-type ZnO film/p-type diamond film on the {111} crystalline diamond substrate have been prepared for the first time. The electrodes of the n- and p-type semiconductors are experimentally verified to be ohmic. The diode shows a good rectification characteristic and the ratio of forward current to the reverse current exceeded 200 within the range of applied voltages of -2 to +2 V. The turn-on voltage of the diode is 0.34 V and the highest current is about 5.0 mA as the forward voltage reaches 2 V. Moreover, the diode is optically transparent in the region of 500-700 nm wavelength.
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| Keywords:
73.40.Lq
73.40.Ei
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Published: 01 January 2003
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.40.Ei
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(Rectification)
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