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Electronic Transport in Nanostructures Consisting of Magnetic-Electric Barriers |
| LU Mao-Wang1;ZHANG Li-De1;YAN Xiao-Hong2 |
| 1Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031
2Department of Physics, Xiangtan University, Xiangtan
411105 |
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| Cite this article: |
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LU Mao-Wang, ZHANG Li-De, YAN Xiao-Hong 2003 Chin. Phys. Lett. 20 124-126 |
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Abstract We present a theoretical investigation on the transport properties of the nanostructures consisting of magnetic-electric barriers produced by the deposition, on the top of a heterostructure, of metallic ferromagnetic stripe with an applied voltage. Both the transmission probability and the conductance are found to be greatly dependent upon the applied voltage. When a positive voltage is applied to the stripe, both the transmission probability and the conductance shift towards low-energy region and increase. Conversely, they move towards high-energy direction and reduce for an applied negative voltage.
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| Keywords:
73.40.Gk
72.10.-d
75.70.Cn
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Published: 01 January 2003
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| PACS: |
73.40.Gk
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(Tunneling)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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75.70.Cn
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(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
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