Chin. Phys. Lett.  2002, Vol. 19 Issue (6): 867-870    DOI:
Original Articles |
Influence of Ambient Atmosphere on the Plasmon Resonance Absorption of Ag/SiOx (0 ≤ x ≤ 2) Nanocomposite Film
YANG Lin1;LIU Yu-Liang1;WANG Qi-Ming1;LI Guang-Hai2;ZHANG Li-De2
1Research and Development Center for Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
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YANG Lin, LIU Yu-Liang, WANG Qi-Ming et al  2002 Chin. Phys. Lett. 19 867-870
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Abstract Nanocomposite films consisting of nanosized Ag particles embedded in partially oxidized amorphous Si-containing matrices were prepared by the radio frequency magnetron co-sputtering deposition. We studied the influence of ambient atmosphere during the preparation and heat-treatment of Ag/SiOx (0 ≤ x ≤ 2) nanocomposite film on its optical absorption properties. We found that the plasmon resonance absorption peak shifts to shorter wavelengths with theincreasing oxygen content in the SiOx matrix. The analysis indicates that the potential barrier between Ag nanoparticles and SiOx matrix increases with the increasing x value, which will induce the surface resonance state to shift to higher energy. The electrons in the vicinity of the Fermi level of Ag nanoparticles must absorb more energy to be transferred to the surface resonance state with the increasing x value. It was also found that the plasmon resonance absorption peaks of the samples annealed in different ambient atmospheres are located at about the same position. This is because the oxidation surface layer is dense enough to prevent the oxygen from penetrating into the sample to oxidize the silicon in the inner layer.
Keywords: 78.66.-w      78.40.-q      78.30.-j     
Published: 01 June 2002
PACS:  78.66.-w (Optical properties of specific thin films)  
  78.40.-q (Absorption and reflection spectra: visible and ultraviolet)  
  78.30.-j (Infrared and Raman spectra)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2002/V19/I6/0867
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YANG Lin
LIU Yu-Liang
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LI Guang-Hai
ZHANG Li-De
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