Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films

Chin. Phys. Lett.

2002, Vol. 19

Issue (5): 717-719 DOI:

Original Articles

Electroluminescence of Boron and Nitrogen Doped Diamond Thin Films

WANG Xiao-Ping^1,2;WANG Li-Jun¹;ZHANG Bing-Lin²;YAO Ning²;MA Hui-Zhong²;SONG Tian-Fu²;LI Guang-Ting¹;YANG Shi-E²;BIAN Chao²;LI Hui-Jun²;MA Bing-Xian²

¹Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450005 ²Department of Physics, Zhengzhou University, Zhengzhou 450052

Cite this article:

WANG Xiao-Ping, WANG Li-Jun, ZHANG Bing-Lin et al 2002 Chin. Phys. Lett. 19 717-719

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Abstract An electroluminescence (EL) device is investigated by using boron and nitrogen double-doped diamond films. The characteristics of the EL spectrum and the dependence of EL intensity on boron and nitrogen impurity are investigated. The experiment indicated that the intensity of EL increases obviously and the threshold voltage decreases with increasing nitrogen impurity within our doped level, meanwhile the highest emission line changes from the blue region (peaks at 470 nm) to the yellow region (peaks at 584 nm).

Keywords: 68.55.Gi 85.60.JB

Published: 01 May 2002

PACS:	68.55.Gi
	85.60.Jb	(Light-emitting devices)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I5/0717

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	WANG Xiao-Ping
	WANG Li-Jun
	ZHANG Bing-Lin
	YAO Ning
	MA Hui-Zhong
	SONG Tian-Fu
	LI Guang-Ting
	YANG Shi-E
	BIAN Chao
	LI Hui-Jun
	MA Bing-Xian

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