| Original Articles |
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Lattice Strain Induced by Ion Implantation in AlGaAs/AlGaInAs Quantum Well Samples |
| LIU Pi-Jun1;XIA Yue-Yuan1;LIU Xiang-Dong1;YUAN Feng-Po2;PAN Jiao-Qing3;XUE Cheng-Shan4;LI Yu-Guo4;ZHAO Ming-Wen1;MA Yu-Chen1
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| 1Department of Physics, Shandong University, Ji’nan 250100
2Hebei Semiconductor Research Institute, Shijiazhuang 050002
3Institute of Crystal Materials, Shandong University, Ji’nan 250100
4Institute of Semiconductor, Shandong Normal University, Ji’nan 250100
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| Cite this article: |
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LIU Pi-Jun, XIA Yue-Yuan, LIU Xiang-Dong et al 2002 Chin. Phys. Lett. 19 599-601 |
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Abstract Si+ ions of 350 keV have been implanted into AlGaAs/AlGaInAs quantum well samples in the dose range from 5 x 1013cm-2 to 5 x 1014cm-2. The Raman spectra and high resolution x-ray diffraction (HRXRD) were measured from these implanted samples as well as the un-implanted one. In the implanted layers the average strain which was evaluated by HRXRD increases with the implantation doses and varies from 0.0011 to 0.0029. The quantum well interface intermixing effect and compositional modification also observed from HRXRD. At the higher doses, an abnormal annealing procedure takes place and it partly removes damage, but the strain is kept almost unchanged in the epilayers.
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| Keywords:
82.80.Yc
78.55.Cr
61.72.Vv
78.30.-j
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Published: 01 April 2002
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| PACS: |
82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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78.55.Cr
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(III-V semiconductors)
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61.72.Vv
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78.30.-j
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(Infrared and Raman spectra)
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