Polarization Fatigue in Ferroelectric Thin Films

Chin. Phys. Lett.

2002, Vol. 19

Issue (4): 566-568 DOI:

Original Articles

Polarization Fatigue in Ferroelectric Thin Films

WANG Yi^1,2;K. H. WONG²;WU Wen-Bin¹

¹Structure Research Laboratory & Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026 ²Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong

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WANG Yi, K. H. WONG, WU Wen-Bin 2002 Chin. Phys. Lett. 19 566-568

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Abstract The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

Keywords: 77.55.+f 77.80.Dj 77.22.Ch

Published: 01 April 2002

PACS:	77.55.+f
	77.80.Dj	(Domain structure; hysteresis)
	77.22.Ch	(Permittivity (dielectric function))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I4/0566

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