| Original Articles |
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Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I-V-T Technique |
| JIANG Yu-Long1;RU Guo-Ping1;LU Fang2;QU Xin-Ping1;LI Bing-Zong1;LI Wei3;LI Ai-Zhen3 |
| 1Department of Microelectronics, ASIC & System State Key Laboratory, Fudan University, Shanghai 200433
2State Key Laboratory of Applied Surface Physics, Fudan University, Shanghai 200433
3State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
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| Cite this article: |
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JIANG Yu-Long, RU Guo-Ping, LU Fang et al 2002 Chin. Phys. Lett. 19 553-556 |
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Abstract The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78 to 299 K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact. The experiment shows that the apparent barrier height (Фap) increases from 0.437 eV at 78 K to 0.698 eV at room temperature. The plot of Фap versus 1/T does not exhibit a simple linear relationship over the whole temperature range, indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution. A new multi-Gaussian distribution model is developed. Our experimental results can be explained by a double Gaussian distribution of the barrier heights. The weight, the mean barrier height, and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999, 0.721 and 0.696, 0.069 and 0.012eV, respectively.
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| Keywords:
73.30.+y
73.40.Ns
85.30.De
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Published: 01 April 2002
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| PACS: |
73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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73.40.Ns
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(Metal-nonmetal contacts)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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