Interfacial Properties of AlN/Si(111) Grown by Metal-Organic
Chemical Vapor Deposition

Chin. Phys. Lett.

2002, Vol. 19

Issue (4): 543-545 DOI:

Original Articles

Interfacial Properties of AlN/Si(111) Grown by Metal-Organic Chemical Vapor Deposition

XI Dong-Juan;ZHENG You-Dou;CHEN Peng;ZHAO Zuo-Ming;CHEN Ping;XIE Shi-Yong;JIANG Ruo-Lian;SHEN Bo;GU Shu-Lin;ZHANG Rong

Department of Physics, Nanjing University, Nanjing 210093

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XI Dong-Juan, ZHENG You-Dou, CHEN Peng et al 2002 Chin. Phys. Lett. 19 543-545

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Abstract We have studied the interfacial structures of AlN/Si(111) grown by metal-organic 0chemical vapor deposition. X-ray photoelectron spectrum and Auger electron spectrum were employed to analyse the components and chemical structures of AlN/Si(111). The results indicated that a mix-crystal transition region, approximately 12nm, was present between AlN film and Si substrate and it was composed of AlN and Si₃N₄. After analysis we found the existence of Si₃N₄ could not be avoided in AlN/Si(111) interface because of strong diffusion at 1070°C. Even in AlN layer Si-N bonds, Si-Si bonds can be found.

Keywords: 68.55.Jk 81.05.Ea 82.80.Pv

Published: 01 April 2002

PACS:	68.55.Jk
	81.05.Ea	(III-V semiconductors)
	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I4/0543

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	XI Dong-Juan
	ZHENG You-Dou
	CHEN Peng
	ZHAO Zuo-Ming
	CHEN Ping
	XIE Shi-Yong
	JIANG Ruo-Lian
	SHEN Bo
	GU Shu-Lin
	ZHANG Rong

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