| Original Articles |
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Intracavity-Doubled Self-Q-Switched Nd,Cr:YAG 946/473 nm
Microchip Laser
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| LI De-Hua1;WANG Ling1;GAO Chun-Qing1,5;ZHANG Zhi-Guo1;FENG Bao-Hua1;Volker Gaebler2;LIU Bai-Ning2;H. J. Eichler2;ZHANG Shi-Wen3;LIU An-Han3;SHEN De-Zhong4 |
| 1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Optical Institute, Technical University Berlin, Strasse de 17 Juni 135, D-10623 Berlin, Germany
3North China Research Institute of Electro-Optics, Beijing 100015
4Research Institute of Synthetic Crystal, P.O. Box 733, Beijing 100018
5Optical Engineering Department, Beijing Institute of Technology, Beijing 100081 Permanent address
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| Cite this article: |
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LI De-Hua, WANG Ling, GAO Chun-Qing et al 2002 Chin. Phys. Lett. 19 504-506 |
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Abstract We carried out the operation of an intracavity frequency-doubled self-Q-switched Nd,Cr:YAG/KNbO3 946/473nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power of 12 mW was achieved with a repetition rate of 13 kHz at an absorbed pump power of 545 mW. The pulses of 473 nm laser had duration of 7ns and peak power of 132 W at this pump level. The conversion efficiency was 2.2 % with respect to absorbed pump power of 808 nm laser.
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| Keywords:
42.60.Gd
42.55.Sa
42.65.Ky
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Published: 01 April 2002
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| PACS: |
42.60.Gd
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(Q-switching)
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42.55.Sa
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(Microcavity and microdisk lasers)
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42.65.Ky
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(Frequency conversion; harmonic generation, including higher-order harmonic generation)
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