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Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions |
| LIU Cun-Ye1,2;LI Jian1;CHEN Jian-Yong1;XU Qing-Yu2;NI Gang2;DU You-Wei2 |
| 1Department of Physics, Southwest China Normal University, Chongqing 400715
2National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
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| Cite this article: |
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LIU Cun-Ye, LI Jian, CHEN Jian-Yong et al 2002 Chin. Phys. Lett. 19 398-401 |
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Abstract Anomalous transport behaviour, i.e., the dependence of the tunnel resistance on the injection current, has been discovered in Ta/Co/Al2O3/FeNi tunnel junctions. The zero field voltage-current characteristic of the magnetic tunneling junction obeys the transport principle of the normal tunnel junction at low injection current, but it exhibits the negative resistance behaviour when the injection current is raised to the breakover current level. The physics of the restorable electric breakdown has been initially studied.
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| Keywords:
73.40.Rw
75.70.Cn
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Published: 01 March 2002
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| PACS: |
73.40.Rw
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(Metal-insulator-metal structures)
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75.70.Cn
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(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
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