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Growth of Silicon Nanowires by Heating Si Substrate |
| XING Ying-Jie1;XI Zhong-He1;YU Da-Peng2;HANG Qing-Ling2;YAN Han-Fei2;FENG Sun-Qi2;XUE Zeng-Quan1 |
| 1Department of Electronics, Peking University, Beijing 100871
2Department of Physics, Peking University, Beijing 100871
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| Cite this article: |
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XING Ying-Jie, XI Zhong-He, YU Da-Peng et al 2002 Chin. Phys. Lett. 19 240-242 |
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Abstract Amorphous silicon nanowires were prepared by heating Si substrate at high temperature using an Ni (or Au) catalyst. The nanowires have a diameter of 10 - 40 nm and a length up to several tens of micrometers. Different from the well-known vapor-liquid-solid mechanism, a solid-liquid-solid mechanism appeared to control the nanowire growth. The heating process had strong influence on the growth of silicon nanowires. It was found that ambient gas was necessary to grow nanowire. This method can be used to prepare other kinds of nanowires.
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61.46.+w
81.10.Jt
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Published: 01 February 2002
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61.46.+w
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81.10.Jt
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(Growth from solid phases (including multiphase diffusion and recrystallization))
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