Chin. Phys. Lett.  2002, Vol. 19 Issue (11): 1707-1710    DOI:
Original Articles |
Characterization of Growth Hillocks on the Surface of High-Pressure Synthetic Diamonds
YIN Long-Wei1;LI Mu-Sen1;YUAN Quan2;XU Bin1;HAO Zhao-Yin3
1College of Materials Science and Engineering, Shandong University, Ji’nan 250061 2College of Mechanical Science and Engineering, Shandong University, Ji’nan 250061 3National Key Laboratory for Superhard Materials, Jilin University, Changchun 130012
Cite this article:   
YIN Long-Wei, LI Mu-Sen, YUAN Quan et al  2002 Chin. Phys. Lett. 19 1707-1710
Download: PDF(416KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Diamond crystals, with dimensions of about 0.5-0.6 mm, were synthesized in the presence of Fe-Ni and Fe-Ni-Si catalyst solvents under high-pressure-high-temperature (HPHT) conditions. The as-known dendritic pattern was clearly seen on the (111) or (100) planes of diamond single crystals grown using Fe-Ni as a catalyst solvent. However, the conventional dendritic pattern was not observed in diamonds grown in the presence of Fe-Ni-Si alloy catalyst. Trigonal-type, pyramid-type, polygonal-type, and rectangular-type growth hillocks were clearly observed on the (111) and (100) surfaces of diamonds grown from the Fe-Ni-Si-C system, and the density of the hillocks is very higher at some position. Clear successive growth layers can also be found on the (111) planes of the high-pressure diamond single crystals grown in the presence of Fe-Ni Si alloy catalyst. The growth hillocks distributing on the (111) and (100) planes of the diamonds generally occur on or near growth steps, and some of the hillocks terminate at certain solid inclusions and voids. Growth hillocks on the (111) and (100) surfaces directly indicate the spiral growth mechanism under high temperature-high pressure (HPHT). A possible formation process for growth hillocks is proposed.
Keywords: 81.10.-h      81.10.Aj      61.72.Hh      81.65.Cf      81.10.Dn     
Published: 01 November 2002
PACS:  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  61.72.Hh (Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))  
  81.65.Cf (Surface cleaning, etching, patterning)  
  81.10.Dn (Growth from solutions)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2002/V19/I11/01707
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
YIN Long-Wei
LI Mu-Sen
YUAN Quan
XU Bin
HAO Zhao-Yin
Related articles from Frontiers Journals
[1] JI Xiao-Rui, YANG Xiao-Hong. Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature[J]. Chin. Phys. Lett., 2012, 29(3): 1707-1710
[2] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 1707-1710
[3] LU Yun-Bin, LIAO Shu-Zhi**, PENG Hao-Jun, ZHANG Chun, ZHOU Hui-Ying, XIE Hao-Wen, OUYANG Yi-Fang, ZHANG Bang-Wei, . Size Model of Critical Temperature for Grain Growth in Nano V and Au[J]. Chin. Phys. Lett., 2011, 28(8): 1707-1710
[4] BAO Li-Hong, ZHANG Jiu-Xing**, ZHOU Shen-Lin, ZHANG Ning, XU Hong . Floating Zone Growth and Thermionic Emission Property of Single Crystal CeB6[J]. Chin. Phys. Lett., 2011, 28(8): 1707-1710
[5] GAO Zhao-Shun, ZHANG Xian-Ping, WANG Dong-Liang, QI Yan-Peng, WANG Lei, CHENG Jun-Sheng, WANG Qiu-Liang, MA Yan-Wei**, AWAJI Satoshi, WATANABE Kazuo . Fabrication and Properties of Aligned Sr0.6K0.4Fe2As2 Superconductors by High Magnetic Field Processing[J]. Chin. Phys. Lett., 2011, 28(6): 1707-1710
[6] LI Shang-Sheng, LI Xiao-Lei, MA Hong-An, SU Tai-Chao, XIAO Hong-Yu, HUANG Guo-Feng, LI Yong, ZHANG Yi-Shun, JIA Xiao-Peng, ** . Reaction Mechanism of Al and N in Diamond Growth from a FeNiCo-C System[J]. Chin. Phys. Lett., 2011, 28(6): 1707-1710
[7] GUO Xiao-Song, BAO Zhong, ZHANG Shan-Shan, XIE Er-Qing** . A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(2): 1707-1710
[8] ZHAO Jing, MIAO Hong**, DUAN Li, KANG Qi, HE Ling-Hui . In Situ Observation of NaCl Crystal Growth by the Vapor Diffusion Method with a Mach–Zehnder Interferometer[J]. Chin. Phys. Lett., 2011, 28(10): 1707-1710
[9] CHENG Jin, , ZOU Xiao-Ping, SONG Wei-Li, CAO Mao-Sheng, SU Yi, YANG Gang-Qiang, , Lü Xue-Ming, ZHANG Fu-Xue,. Shape-Controlled Synthesis and Related Growth Mechanism of Pb(OH)2 Nanorods by Solution-Phase Reaction[J]. Chin. Phys. Lett., 2010, 27(5): 1707-1710
[10] HOU Zhao-Yang, LIU Li-Xia, LIU Rang-Su, TIAN Ze-An. Tracing Nucleation and Growth on Atomic Level in Amorphous Sodium by Molecular Dynamics Simulation[J]. Chin. Phys. Lett., 2010, 27(3): 1707-1710
[11] TANG Qi-Heng, YANG Tian-Yong, DING Lan. Mechanical Behavior of Nanometer Ni by Simulating Nanoindentation[J]. Chin. Phys. Lett., 2010, 27(2): 1707-1710
[12] FU Xin, JIANG Jun, LIU Chao, YU Zhi-Yang, Steffan LEA, YUAN Jun,. Re-entrant-Groove-Assisted VLS Growth of Boron Carbide Five-Fold Twinned Nanowires[J]. Chin. Phys. Lett., 2009, 26(8): 1707-1710
[13] LU Guang-Duo, ZHANG Huai-Wu, TANG Xiao-Li, ZHONG Zhi-Yong, PENG Long. Theoretical Investigations on the Off-Center Displacement of Co2+ in SrO by Analyzing Its Anisotropic g Factors[J]. Chin. Phys. Lett., 2009, 26(8): 1707-1710
[14] XIONG Juan, GU Hao-Shuang, HU Kuan, HU Ming-Zhe. Fabrication and Frequency Response Characteristics of AlN-Based Solidly Mounted Resonator[J]. Chin. Phys. Lett., 2009, 26(4): 1707-1710
[15] ZHOU Sheng-Guo, ZANG Chuan-Yi, MA Hong-An, HU Qiang, LI Xiao-Lei, LI Shang-Sheng, ZHANG He-Min, JIA Xiao-Peng,. HPHT Synthesis of Different Shape Coarse-Grain Diamond Single Crystals[J]. Chin. Phys. Lett., 2009, 26(4): 1707-1710
Viewed
Full text


Abstract