| Original Articles |
|
|
|
|
Distribution Function of Mesoscopic Hopping Conductance |
| HE Li-Qun1,2;Eugene Kogan2;Moshe Kaveh2;Shlomo Havlin2;Nehemia Schartz2;LUO Dawei3 |
| 1Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Hefei 230026
2Minerva Center and Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel
3Department of Mechanical Engineering, University of Kentucky, Lexington, KY 40506-0108, USA |
|
| Cite this article: |
|
HE Li-Qun, Eugene Kogan, Moshe Kaveh et al 2002 Chin. Phys. Lett. 19 1683-1686 |
|
|
|
Abstract We study mesoscopic hopping conductance by computer simulation
distribution functions (DF). It is found that the distributions obtained by choosing randomly the chemical potentials (for a fixed impurity configuration), which corresponds to a typical experimental situation, coincide with those obtained when both impurity configuration and chemical potential are chosen randomly, in agreement with the ergodicity hypothesis. The DFs in shape obtained for one-dimensional systems are found to be quite close to the predictions of the theory by Raikh and Ruzin. For the two-dimensional case, the DFs both for a narrow system and thin film look to be similar (and close to the one-dimensional case). The distribution function for the conductance of the square sample is nearly Gaussian.
|
| Keywords:
72.15.Rn
72.80.Ng
73.50.-h
|
|
|
Published: 01 November 2002
|
|
| PACS: |
72.15.Rn
|
(Localization effects (Anderson or weak localization))
|
| |
72.80.Ng
|
(Disordered solids)
|
| |
73.50.-h
|
(Electronic transport phenomena in thin films)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
