| Original Articles |
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Effective Stress Reduction in Diamond Films on Alumina by
Carbon Ion Implantation |
| FANG Zhi-Jun;XIA Yi-Ben;WANG Lin-Jun;ZHANG Wei-Li;MA Zhe-Guo;ZHANG Ming-Long |
| School of Materials Science and Engineering, Shanghai University, Shanghai 201800 |
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| Cite this article: |
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FANG Zhi-Jun, XIA Yi-Ben, WANG Lin-Jun et al 2002 Chin. Phys. Lett. 19 1663-1665 |
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Abstract We show the effective stress reduction in diamond films by implanting carbon ions into alumina substrates prior to the diamond deposition. Residual stresses in the films are evaluated by Raman spectroscopy and a more reliable method for stress determination is presented for the quantitative measurement of stress evolution. It is found that compressive stresses in the diamond films can be partly offset by the compressive stresses in the alumina substrates, which are caused by the ion pre-implantation. At the same time, the difference between the offset by the pre-stressed substrates and the total stress reduction indicates that some other mechanisms are also active.
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| Keywords:
62.40.+i
68.55.Ln
78.30.-j
81.05.Tp
81.05.Je
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Published: 01 November 2002
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| PACS: |
62.40.+i
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(Anelasticity, internal friction, stress relaxation, and mechanical resonances)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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78.30.-j
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(Infrared and Raman spectra)
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81.05.Tp
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81.05.Je
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(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
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Abstract
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