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Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline α-Al2O3 Buffer Layer |
| JIANG Ruo-Lian;WANG Jun-Zhuan;CHEN Peng;ZHAO Zuo-Ming;MEI Yong-Feng;SHEN Bo;ZHANG Rong;WU Xing-Long;ZHENG You-Dou |
| Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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JIANG Ruo-Lian, WANG Jun-Zhuan, CHEN Peng et al 2002 Chin. Phys. Lett. 19 1553-1555 |
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Abstract Using nearly polycrystalline α-Al2O3 as the buffer layer, GaN epilayers were grown on Si (111) substrates by low pressure metalorgnic chemical-vapor deposition. The nearly polycrystalline α-Al2O3 was formed by anodic porous alumina annealed at high temperature. Prototype photoconductive detectors were fabricated with these materials. The spectral response of these detectors exhibits a relatively sharp cutoff near the wavelength of 360 nm and a peak at 340 nm with a shoulder near 360 nm. Under 5 V bias, the responsivities at 340 nm and 360 nm were measured to be 3.3 A/W and 2.4 A/W, respectively. The relationship between the responsivity and the bias voltage shows that the responsivity is saturated when the bias voltage reaches 5 V.
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| Keywords:
85.60.Bt
78.66.Fd
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Published: 01 October 2002
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| PACS: |
85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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78.66.Fd
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(III-V semiconductors)
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