Chin. Phys. Lett.  2002, Vol. 19 Issue (10): 1540-1542    DOI:
Original Articles |
Storage of Photoexcited Electron-Hole Pairs in an AlAs/GaAs Heterosturcture Created by Electron Transfer in Real and k Spaces
PENG Jin;HU Bing;HU Cheng-Yong;BIAN Song-Bao;YANG Fu-Hua;ZHENG Hou-Zhi
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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PENG Jin, HU Bing, HU Cheng-Yong et al  2002 Chin. Phys. Lett. 19 1540-1542
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Abstract The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transfering electrons in both real and k spaces through resonant Γ - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.
Keywords: 79.60.Jv      42.79.Vb     
Published: 01 October 2002
PACS:  79.60.Jv (Interfaces; heterostructures; nanostructures)  
  42.79.Vb (Optical storage systems, optical disks)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2002/V19/I10/01540
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PENG Jin
HU Bing
HU Cheng-Yong
BIAN Song-Bao
YANG Fu-Hua
ZHENG Hou-Zhi
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