| Original Articles |
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Current Self-Oscillations in Negative Effective Mass Terahertz
Oscillators |
| CAO Jun-Cheng |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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CAO Jun-Cheng 2002 Chin. Phys. Lett. 19 1519-1521 |
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Abstract We theoretically study current self-oscillations and spatiotemporal current patterns in quantum-well negative-effective mass (NEM) p+pp+ diodes by considering scattering contributions from impurity, acoustic phonon, and optic phonon. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies. The NEM p+pp+ diode presented here may be used as an electrically tunable terahertz source.
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| Keywords:
73.61.Ey
73.50.Fq
85.30.Fg
85.30.De
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Published: 01 October 2002
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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73.50.Fq
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(High-field and nonlinear effects)
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85.30.Fg
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(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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