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Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN |
| WANG Cheng-Xin;GAO Chun-Xiao;ZHANG Tie-Chen;LIU Hong-Wu;LI Xun;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia |
| State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 |
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| Cite this article: |
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WANG Cheng-Xin, GAO Chun-Xiao, ZHANG Tie-Chen et al 2002 Chin. Phys. Lett. 19 1513-1515 |
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Abstract A Heterojunction diode has been fabricated by boron-doped p-type diamond thin film grown epitaxially on a silicon-doped n-type cubic boron nitride bulk crystal using the conventional hot filament chemical vapor deposition method. The ohmic electrode of Ti (50 nm)/Mo (100 nm)/Au (300 nm) for the p-type diamond film and the bulk crystal of the c-BN were deposited by the rf planar magnetron method. Then the device was annealed at 410°C in air for 1 h in order to form ohmic metal alloy. The I-V characteristics of the hetero-junction diode were measured and the result indicated that the rectification ratio reached 105, and the turn-on voltage and the highest current were 7 V and 0.35 mA, respectively.
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| Keywords:
73.40.Lq
73.40.Ei
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Published: 01 October 2002
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.40.Ei
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(Rectification)
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