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Photodarkening in Amorphous As2S3 Thin Films |
| LIU Qi-Ming;GAN Fu-Xi |
| Shanghai Institute of Optics and Fine Mechanics, Chinese
Academy of Sciences, P.O. Box 800-216, Shanghai 201800
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| Cite this article: |
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LIU Qi-Ming, GAN Fu-Xi 2002 Chin. Phys. Lett. 19 124-126 |
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Abstract The photodarkening effect in amorphous As2S3 films is studied. The optical absorption edge shifts to lower energy after illumination at the bandgap light of 514.5 nm wavelength by an argon laser. The shift in well-annealed films can be recovered by annealing at 180°C for 1 h but in un-annealed films it is irreversible. In addition, it was found that the magnitude of photodarkening ΔE increased with the increase of illumination light intensity and illumination time. The reversibility of photodarkening in amorphous As2S3 films can be applied in optical memories.
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| Keywords:
78.20.Ci
78.66.Jg
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Published: 01 January 2002
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| PACS: |
78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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78.66.Jg
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(Amorphous semiconductors; glasses)
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