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Electron States of Few-Electron Quantum Dots |
| DAI Zhen-Hong1,2,3;SUN Jin-Zuo2,3;ZHANG Li-De1;LI Zuo-Hong2,3;HUANG Shi-Yong2,3;SUI Peng-Fei2,3 |
| 1Institute of Solid State Physics, Chinese Academy of
Sciences, P.O. Box 1129, Hefei 230031
2CCAST(World Laboratory), P.O. Box8730, Beijing 100080
3Department of Physics, Yantai University, Yantai 264005
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| Cite this article: |
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DAI Zhen-Hong, SUN Jin-Zuo, ZHANG Li-De et al 2002 Chin. Phys. Lett. 19 117-119 |
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Abstract We study few-electron semiconductor quantum dots using the unrestricted Hartree-Fock-Roothaan method based on the Gaussian Basis. Our emphasis is on the energy level calculation for quantum dots. The confinement potential in a quantum dot is assumed to be in a form of three-dimensional spherical finite potential well. Some valuable results, such as the rearrangement of the energy level, have been obtained.
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| Keywords:
73.23.Hk
73.20.Dx
72.10.Fk
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Published: 01 January 2002
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| PACS: |
73.23.Hk
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(Coulomb blockade; single-electron tunneling)
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73.20.Dx
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72.10.Fk
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(Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))
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