| Original Articles |
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Range and Annealing Behaviour of Pb+ Ion-Implanted into LiNbO3 Crystals at Moderate Energies |
| CHEN Feng1;HU Hui1;ZHANG Jian-Hua1;LIU Xiang-Dong1;XIA Hui-Hao1;SHI Bo-Rong1,2;WANG Ke-Ming1 |
| 1Department of Physics, Shandong University, Ji’nan 250100
2Department of Physics, Hong Kong University of Science and Technology, Hong Kong
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| Cite this article: |
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CHEN Feng, HU Hui, ZHANG Jian-Hua et al 2002 Chin. Phys. Lett. 19 101-104 |
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Abstract Pb+ ions have been implanted into LiNbO3 crystals in the energy range of 100-350keV at doses of 5 x 1015, 1 x 1016 and 2 x 1016 ions/cm2. The profile of the implanted ions was measured by Rutherford backscattering. The mean projected range and the range straggling obtained from the experiment were compared with the TRIM'98 and SRIM 2000 code. In the present case, the TRIM'98 code predicts experimental values better than those of the SRIM 2000 code. The depth distribution is also found to be independent of dose for 350-keV Pb+ implanted into LiNbO3 crystals. After 800°C annealing for 60 min in ambient air, obvious diffusion occurs to the implanted Pb+ ions at 150 keV with a dose of 5 x 1015 ions/cm2. After a low-temperature treatment at 77 K in liquid nitrogen, no obvious diffusion phenomenon occurs for the implanted Pb+ ions in LiNbO3.
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| Keywords:
61.72.Ww
61.85.+p
61.80.-x
42.70.-a
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Published: 01 January 2002
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| PACS: |
61.72.Ww
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61.85.+p
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(Channeling phenomena (blocking, energy loss, etc.) ?)
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61.80.-x
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(Physical radiation effects, radiation damage)
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42.70.-a
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(Optical materials)
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