Chin. Phys. Lett.  2001, Vol. 18 Issue (8): 1138-1140    DOI:
Original Articles |
Monte Carlo Simulation of Diamond Deposition at Low Temperature
DONG Li-Fang;ZHANG Yu-Hong
College of Physics Science and Technology, Hebei University, Baoding 071002
Cite this article:   
DONG Li-Fang, ZHANG Yu-Hong 2001 Chin. Phys. Lett. 18 1138-1140
Download: PDF(322KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Diamond deposition at low temperature is investigated and the relationship between substrate temperature for diamond growth and the energy of the carbonaceous species is given. The electron energy distribution and velocity distribution during the electron assisted chemical vapor deposition have been obtained by using Monte Carlo simulation. The main results obtained are as follows. (1) The substrate temperature for diamond growth will be lower than 800°C when the carbonaceous species on the substrate have mobility energy. For example, if the energy of the carbonaceous species is 0.75 eV, the substrate temperature will be 380°C - 600°C. (2) The great number of atomic H on the substrate is of importance to the growth of diamond films.

Keywords: 81.15.Gh      02.50.Ng     
Published: 01 August 2001
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  02.50.Ng (Distribution theory and Monte Carlo studies)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2001/V18/I8/01138
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
DONG Li-Fang
ZHANG Yu-Hong
Related articles from Frontiers Journals
[1] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 1138-1140
[2] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 1138-1140
[3] YAN Yue, WU Biao**. Local Field Distributions in Systems with Dipolar Interaction[J]. Chin. Phys. Lett., 2012, 29(1): 1138-1140
[4] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 1138-1140
[5] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 1138-1140
[6] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 1138-1140
[7] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 1138-1140
[8] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 1138-1140
[9] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 1138-1140
[10] HOU Qi-Feng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. Chin. Phys. Lett., 2011, 28(3): 1138-1140
[11] YU Chen-Hui, LIU Cheng, HAN Xiang-Yun, KANG Wei, FANG Yan-Yan, DAI Jiang-Nan, WU Zhi-Hao, CHEN Chang-Qing** . Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 1138-1140
[12] ZHOU Zhi-Feng, QIN Fu-Wen, **, ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 1138-1140
[13] LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers[J]. Chin. Phys. Lett., 2011, 28(12): 1138-1140
[14] LI Li-Gong, LIU Shu-Man**, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo . Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(11): 1138-1140
[15] ZHU Guang-Yao, GU Shu-Lin**, ZHU Shun-Ming, TANG Kun, YE Jian-Dong, ZHANG Rong, SHI Yi, ZHENG You-Dou . Simulation and Suppression of the Gas Phase Pre-reaction in Metal-Organic Chemical Vapor Deposition of ZnO[J]. Chin. Phys. Lett., 2011, 28(11): 1138-1140
Viewed
Full text


Abstract