| Original Articles |
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Crystal Tilts in Epitaxially Laterally Overgrown GaN Films
Determined by Four-Circle X-Ray Diffraction |
| WANG Feng，ZHANG Rong;CHEN Zhi-Zhong;WU Xiao-Shan;GU Shu-Lin;SHEN Bo;ZHENG You-Dou;JIANG Shu-Sheng |
| Department of Physics and National Laboratoy of Solid State
Microstructures, Nanjing University, Nanjing 210093
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| Cite this article: |
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WANG Feng, ZHANG Rong, CHEN Zhi-Zhong et al 2001 Chin. Phys. Lett. 18 813-815 |
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Abstract Crystal tilts in epitaxially laterally overgrown (ELO) GaN films via hydride vapor phase epitaxy (HVPE) on sapphire substrates have been investigated by using four-circle x-ray diffraction method. Three diffraction peaks corresponding to the (0002) reflection of vertically epitaxial and tilted GaN domains are observable in the x-ray rocking curve. The angle separations Δω between the main peak and two lobes change with the azimuth angle Ф. The dependence of Δω on Ф and the crystal tilt angle θ has been calculated based on the standard kinetic x-ray diffraction model. The crystal tilt angle of a typical HVPE ELO GaN sample has been determined to be 2.379°C.
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| Keywords:
68.55.Jk
61.10.-i
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Published: 01 June 2001
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