Enhancement of Band Edge Emission from ZnS/Zn(OH)<suB>2</suB> Quantum Dots

Chin. Phys. Lett.

2001, Vol. 18

Issue (4): 616-618 DOI:

Original Articles

Enhancement of Band Edge Emission from ZnS/Zn(OH)₂ Quantum Dots

Hatim Mohamed El-Khair;XU Ling;HUANG Xin-Fan;LI Ming-Hai;CHEN Kun-Ji

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093

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Hatim Mohamed El-Khair, XU Ling, HUANG Xin-Fan et al 2001 Chin. Phys. Lett. 18 616-618

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Abstract ZnS and Zn(OH)₂ capped ZnS semiconductor quantum dots (QDs) have been synthesized by the colloidal chemical method using inorganic reagents. Transmission electron microscopy and electron diffraction results showed that the monodispersed ZnS QDs have 1 to 5 nm in diameter and the wurtzite structure. The polarities of the precursors and surfactant solvents have shown strong effects on the properties of the photoluminescence for ZnS QDs. For ZnS QDs capped with a wider band gap Zn(OH)₂ shell, the surface trap states were passivated and hence the band-edge emissions have been enhanced.

Keywords: 86.65.+g 78.55.Et 81.65.Rv 82.45.+z

Published: 01 April 2001

PACS:	86.65.+g
	78.55.Et	(II-VI semiconductors)
	81.65.Rv	(Passivation)
	82.45.+z

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I4/0616

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	Hatim Mohamed El-Khair
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