| Original Articles |
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Electrical and Optical Properties of InGaN/AlGaN Double
Heterostructure Blue Light-Emitting Diodes |
| SHEN Bo;SHI Hong-Tao;ZHANG Rong;CHEN Zhi-Zhong;ZHENG You-Dou |
| National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
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| Cite this article: |
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SHEN Bo, SHI Hong-Tao, ZHANG Rong et al 2001 Chin. Phys. Lett. 18 283-285 |
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Abstract Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were investigated. Measurement of the forward bias current--voltage behaviour of the device demonstrated a departure from the Shockley model of a p--n diode, and it was observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunnelling. Electroluminescence experiments indicated that there was a main emission band around 2.80 eV and a relatively weaker peak at 3.2 eV. A significant blueshift of the optical emission band was observed, which was consistent with the tunnelling character of electrical characteristics. Furthermore, the degradation in I-V characteristics and the low resistance ohmic short of the device were observed.
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| Keywords:
78.60.Fi
73.40.Kp
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Published: 01 February 2001
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| PACS: |
78.60.Fi
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(Electroluminescence)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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