Chin. Phys. Lett.  2001, Vol. 18 Issue (12): 1655-1657    DOI:
Original Articles |
Optical Absorption in SiGe/Si Quantum Well Structures Created by Subband Transitions
YANG Yu;MAO Xu;YANG Hong-Wei;ZHOU Wei;ZHOU Zhen-Lai;LIU Huan-Lin;WANG Xun
Department of Materials Science and Engineering, Yunnan University, Kunming 650091 Surface Physics Laboratory, Fudan University, Shanghai 200433
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YANG Yu, MAO Xu, YANG Hong-Wei et al  2001 Chin. Phys. Lett. 18 1655-1657
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Abstract The absorption in Si1-xGex/Si multiple quantum-well structures is measured. Several separated well absorption peaks corresponding to both intersubband and intervalance band transitions in the samples are observed. In the normal incidence, two broadband peaks are attributed to intervalence band transitions HH0-SO0(2.5μm), HH0-LH0(~ 3μm), respectively. Using 45°incidence of unpolarized light, both the intervalance band transitions and intersubband transitions are observed. The intervalance band transitions (HH0-LH0) are Ge composition dependent, but the intersubband transitions, HH0-HH1(5.9μm) and HH0-HH2(4.3μm), are not sensitive to the Ge composition.
Keywords: 78.30.-j      42.70.-k      81.15.-h     
Published: 01 December 2001
PACS:  78.30.-j (Infrared and Raman spectra)  
  42.70.-k  
  81.15.-h  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2001/V18/I12/01655
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YANG Yu
MAO Xu
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ZHOU Wei
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LIU Huan-Lin
WANG Xun
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