Chin. Phys. Lett.  2001, Vol. 18 Issue (12): 1641-1643    DOI:
Original Articles |
Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures
ZHENG Ze-Wei1,2;SHEN Bo1;JIANG Chun-Ping2;ZHANG Rong1;SHI Yi1;HENG You-Dou1;ZHENG Guo-Zhen2;GUO Shao-Ling2;CHU Jun-Hao2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
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ZHENG Ze-Wei, SHEN Bo, JIANG Chun-Ping et al  2001 Chin. Phys. Lett. 18 1641-1643
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Abstract In the magnetotransport measurements of the two-dimensional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures, a new magnetoresistance oscillation of the 2DEG is observed at low magnetic fields when the Al0.22Ga0.78N layer on GaN is under partially relaxed. It is thought that the misfit dislocations induced by the partialy relaxed Al0.22Ga0.78N layer modulate the distribution of the piezoelectric polarization-induced charges at the Al0.22Ga0.78N/GaN heterointerface, and thus produce a strong modulation-potential at the heterointerface. The strong modulation-potential results in the novel magnetoresistance oscillation of the 2DEG at low magnetic fields.
Keywords: 73.40.-c      73.40.Kp     
Published: 01 December 2001
PACS:  73.40.-c (Electronic transport in interface structures)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2001/V18/I12/01641
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ZHENG Ze-Wei
SHEN Bo
JIANG Chun-Ping
ZHANG Rong
SHI Yi
HENG You-Dou
ZHENG Guo-Zhen
GUO Shao-Ling
CHU Jun-Hao
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